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Reduction of Radiation Induced Neutral Traps. Traps

IP.com Disclosure Number: IPCOM000048886D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Aitken, JM: AUTHOR [+5]

Abstract

Neutral traps in SiO(2) films in semiconductor devices, where those traps have been produced by processing involving radiation, may be decreased by the inclusion of hydrogen in the film. The hydrogen may be introduced during the radiation processing by low temperature hydrogen inclusion. An example of this is blanket reactive ion etching of SiO(2) in a CF(4)-H(2) gas mixture, which has been observed to reduce neutral trap density by approximately a factor of two as compared to etching in CF(4) alone.

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Reduction of Radiation Induced Neutral Traps. Traps

Neutral traps in SiO(2) films in semiconductor devices, where those traps have been produced by processing involving radiation, may be decreased by the inclusion of hydrogen in the film.

The hydrogen may be introduced during the radiation processing by low temperature hydrogen inclusion. An example of this is blanket reactive ion etching of SiO(2) in a CF(4)-H(2) gas mixture, which has been observed to reduce neutral trap density by approximately a factor of two as compared to etching in CF(4) alone.

The hydrogen may also be introduced prior to the radiation processing by annealing at high temperature in a hydrogen gas mixture.

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