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Electrostatic Contamination Reduction

IP.com Disclosure Number: IPCOM000048913D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Stapper, CH: AUTHOR

Abstract

This electrostatic contamination reduction technique provides an ultra pure atmosphere for semiconductor manufacturing areas through the use of electrostatic precipitating air filters in combination with ionized air in order to reduce defects in semiconductor devices caused by atmospherically borne particles.

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Electrostatic Contamination Reduction

This electrostatic contamination reduction technique provides an ultra pure atmosphere for semiconductor manufacturing areas through the use of electrostatic precipitating air filters in combination with ionized air in order to reduce defects in semiconductor devices caused by atmospherically borne particles.

Air to be provided to a sealed manufacturing area is first filtered by a conventional high purity dry filter and then passed through s pair of two-stage electrostatic precipitators. The first precipitator includes a first ionization stage which ionizes the air negatively by a negative discharge. A second, positively charged collector stage removes a substantial portion of the positively charged particles. The second precipitator uses a positive discharge and a negative collector to further remove air-borne particles.

Filtered air is passed to the manufacturing area where it is maintained in a negatively charged state by a plurality of negative discharge ionization devices located in the manufacturing area. Negatively charged particles are collected by a plurality of positively charged collectors located throughout the manufacturing area, for example, in the ceiling, floor and walls. In order to further reduce contamination of the devices being processed, tools and other hardware in the area are negatively charged to electrostatically repel the negatively charged particles which remain airborne. Providing closed conductiv...