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Browse Prior Art Database

Semiconductor Device Isolation Process

IP.com Disclosure Number: IPCOM000048917D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 2 page(s) / 26K

Publishing Venue

IBM

Related People

Howard, DD: AUTHOR [+2]

Abstract

A simple process is provided for making totally isolated single-crystal semiconductor segments for integrated circuits.

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Semiconductor Device Isolation Process

A simple process is provided for making totally isolated single-crystal semiconductor segments for integrated circuits.

As indicated in the figure, an epitaxial layer 10 of magnesium aluminum spinel is grown on a silicon substrate 12 to a thickness of, e.g., one micron. An epitaxial layer 14 of silicon is grown on spinel layer 10 to a thickness of two to three microns with doping levels and gradients as desired. Deep trenches 16 extending at least to the surface of spinel layer 10 are formed in the epitaxial silicon layer 14 to produce isolated single-crystal silicon segments 18. Trenches 16 may be filled with any appropriate dielectric material 20.

Any suitable devices or elements may then be formed in isolated silicon segments 18. If desired, devices or elements may be formed in epitaxial silicon layer 14 before trenches 16 are formed therein.

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