Browse Prior Art Database

Elipsometric Characterization Of Low Dose Ion Implanted Surfaces

IP.com Disclosure Number: IPCOM000048920D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Berard, RW: AUTHOR [+4]

Abstract

Elipsometric measurement of the apparent change in thickness of a thin screen oxide over ion-implanted regions of a semiconductor substrate is used to determine qualitative and quantitative characteristics of low dose ion-implant conditions.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Elipsometric Characterization Of Low Dose Ion Implanted Surfaces

Elipsometric measurement of the apparent change in thickness of a thin screen oxide over ion-implanted regions of a semiconductor substrate is used to determine qualitative and quantitative characteristics of low dose ion-implant conditions.

Elipsometric thickness measurements of a screen oxide, having a thickness of about 200 angstroms both prior to, and immediately after, ion implanting arsenic ions at 110 KeV into silicon at a dose less than that required to provide amorphous regions, show an apparent increase in oxide thickness which is a function of the arsenic dose. This phenomenon is believed to be caused by the damage energy profile effects on the oxide-silicon interface which is characteristic of the arsenic implant. Experiments using boron implants under similar conditions, 100 Kev at various doses, produced no discernable thickness change, apparently due to the substantially lower damage energy profile of boron.

The post-implant elipsometric measurement of the screen oxide thickness requires no additional processing steps after implantation and can be used to verify that semiconductor product wafers have been implanted. Quantitative determination of specific implant dose levels can be made by correlating various apparent oxide thickness measurements to known dosage levels.

1