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High Voltage Isolation In An Ion Implantation System

IP.com Disclosure Number: IPCOM000048993D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 2 page(s) / 26K

Publishing Venue

IBM

Related People

Keller, JH: AUTHOR [+3]

Abstract

An arrangement is described for isolating arcs in ion implantation systems and at the same time giving fast recovery to the arcs.

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High Voltage Isolation In An Ion Implantation System

An arrangement is described for isolating arcs in ion implantation systems and at the same time giving fast recovery to the arcs.

In ion-implantation systems, arcs, due, for example, to dust or vapor and sputter-deposited films, produce extremely large currents (1,000A) which fall from high voltage to ground. These currents and related voltages may damage power supplies and related electronic equipment including the high voltage supply.

Typically, the power which is dropped in an arc may come from two sources:
(1) the capacitance of the components at high voltage and (2) the capacitance in the high voltage supply which is used for maintaining the ripple and regulation specification of the supply. The first source may be made small (a few 100 pF), particularly as compared to that stored in most high current, high voltage supplies.

The arrangement described here, as shown in the figure, uses a resistor (or inductive resistor) to isolate these two sources of energy with the resistor having an impedance value capable of holding off the full voltage of the supply. The resistor is ideally located in the high voltage (HV) supply itself, as shown at 1 in the figure. Voltage regulation is maintained on the output side of the resistor. As can be seen, resistor 1 isolates the power stored in the supply during an arc which normally lasts a few microseconds or less. In this regard, it may be seen from the figure that a two-...