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Method of Preparing TiN Thin Films

IP.com Disclosure Number: IPCOM000049072D
Original Publication Date: 1982-May-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Ting, CY: AUTHOR

Abstract

This article relates generally to methods for preparing thin s metal film and more particularly to a method for preparing titanium nitride (TiN) thin films.

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Method of Preparing TiN Thin Films

This article relates generally to methods for preparing thin s metal film and more particularly to a method for preparing titanium nitride (TiN) thin films.

It is well known that TiN is a good diffusion barrier and a good conductor. However, all the TiN films reported in the literature were prepared by reactive sputtering in an N(2) atmosphere at elevated substrate temperatures which, in many circumstances, limits its applications. This article describes a new method of preparing TiN which will broaden its applications in new fields.

The method for preparing TiN is achieved by using conventional evaporators and by doping Ti films with N(2) during Ti evaporation without substrate heating. Then, the resulting film is annealed in e controlled ambient (N(2), NH(3), vacuum, NH(3) plasma, He, Ar, and other inert gas) at elevated temperatures around 800'C or higher for 30 minutes. A typical example is to pump the evaporator down to 1.5 x 10/-7/ torr or better and bleed N/2/ into the evaporator to 7 x 10 /-6/ torr. Then, Ti is evaporated at a rate of 5 Angstroms/sec. The N(2) partial pressure and Ti deposition rate are chosen so that the impinging rate of N is equal to that of Ti, thereby maintaining the Ti/N ratio as close to one as possible, which is the stoichiometry of TiN. The substrate with the film on top is then annealed at 900 degrees C in He for 30 minutes, transforming Ti(N) into f.c.c. (face center cubic crystal structure) T...