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Shallow Silicide Contact Formation by Using Alternating Metal and Silicon Layered Structure

IP.com Disclosure Number: IPCOM000049078D
Original Publication Date: 1982-May-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Tu, KN: AUTHOR

Abstract

This article relates generally to contact metallurgy for semiconductors and more particularly to silicide contacts which form Schottky or ohmic contacts to shallow junction devices.

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Shallow Silicide Contact Formation by Using Alternating Metal and Silicon Layered Structure

This article relates generally to contact metallurgy for semiconductors and more particularly to silicide contacts which form Schottky or ohmic contacts to shallow junction devices.

A contact which is compatible with shallow junction semiconductor devices may be formed by using a multilayered structure of alternating layers of a silicide former, such as platinum, palladium, titanium, tungsten, etc., and silicon, to build up a silicide contact for silicon without consuming much of the silicon from the substrate. The thicknesses of the alternating layers are about 100 Angstroms to 200 Angstroms and the deposited layer should be the silicide-forming metal. If required, the layers may be as thin as 10 Angstroms to 20 Angstroms to achieve faster interdiffusion.

More specifically, a layer of silicide-forming metal 200 Angstroms to 300 Angstroms thick is desposited on the silicon followed by the alternating deposition of thin layers of silicon and silicide-forming metal up to a total thickness of about 1500 Angstroms. The resulting layered structure is then annealed at the silicide formation temperature to form a shallow silicide contact.

Alternately, using co-deposition or sputtering, a layer of silicide film which contains an excess amount of metal may be prepared on the region to be contacted. A shallow silicide contact is then formed by annealing the resulting film at the sil...