Browse Prior Art Database

Highly Sensitive Positive Resist Systems for Lithographic Applications

IP.com Disclosure Number: IPCOM000049142D
Original Publication Date: 1982-May-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 2 page(s) / 39K

Publishing Venue

IBM

Related People

Kwong, RW: AUTHOR [+3]

Abstract

Described is the synthesis and lithographic application of new resist materials for E-beam, optical and X-ray lithography. It is known in the art of lithography that, in general, the incorporation of atoms with larger cross section enhances electron capture efficiency and also X-ray sensitivity.

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Highly Sensitive Positive Resist Systems for Lithographic Applications

Described is the synthesis and lithographic application of new resist materials for E-beam, optical and X-ray lithography. It is known in the art of lithography that, in general, the incorporation of atoms with larger cross section enhances electron capture efficiency and also X-ray sensitivity.

The present approach provides enhanced sensitivity of the diazoquinone - (1,2) diazide sulfonate esters of halogenated polydroxybenzophenones, polyhydroxybenzils, phenols/cresols and phenol cresol formaldehyde resins. The non-halogenated systems derived from polyhydroxy benzophenone (U.S. Patent 3,148,983) and from phenol/cresol-formaldehyde resins (U.S. Patent 3,046,120) are well known in the patent literature.

It has been found that resists formulated with novolak resin and bromo compounds I, II or III show better lithographic performance than their non- brominated counterparts.

With the formulation of VARCUM* resin 6000-6 and PAC (photoactive compound) I and diglyme containing 30% total solids with 20%, PAC, excellent films are obtained by the usual spin-coat process on Si/SiO(2) wafers. After prebake at approximately 85 degrees for 30 minutes and exposure at 4.3 Mu C/cm/2/ E-beam radiation followed by the usual processing, excellent quality images are obtained with no noticeable scumming for 1 Mu m lines and 1 Mu m spaces.

Based on these observations, quinone diazide sulfonate ester IV of halogenated...