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Browse Prior Art Database

Use of HCL at Base Oxidation

IP.com Disclosure Number: IPCOM000049147D
Original Publication Date: 1982-May-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Cooper, SA: AUTHOR [+3]

Abstract

This article relates to the use of HCL gas at base oxidation to better control RS valves, oxide thickness, mobile charge level, and effects on transistor leakage.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

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Use of HCL at Base Oxidation

This article relates to the use of HCL gas at base oxidation to better control RS valves, oxide thickness, mobile charge level, and effects on transistor leakage.

It has been found that the introduction of HCL gas, as described below, will positively affect the abovementioned parameters. The important variables in the process are the percent HCL and the timing of the gas. It is used for furnace purging as well as wafer cleaning in two separate steps. A 33% HCL gas by flow is used during both HCL steps.

1. Tube Pre Purge

10-minute HCL followed by 5-minute oxygen purge.

2. Wafer Purge

10-minute HCL followed by 5-minute oxygen purge.

These HCL purges are done prior to steam and oxide growth, thereby effectively cleaning the tube, quartzware and wafers prior to oxide growth.

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