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High Temperature Process Furnace

IP.com Disclosure Number: IPCOM000049221D
Original Publication Date: 1982-May-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 2 page(s) / 41K

Publishing Venue

IBM

Related People

Santini, H: AUTHOR

Abstract

A high temperature multi-zone process furnace 10 having stationary radiation shields 12 and 14 and tiltable radiation shield 16 is suitable for growing epitaxial layers of garnet materials on wafers, as shown in the drawing. The furnace 10 includes an outer insulative layer 18, a liner 19 and heating elements 20 to heat temperature zones 22, 24, 26 and 28. A plurality of wafers 30 are mounted in wafer holder 32 that is attached to dipping rod 34. Mobile radiation shields 36 are also attached to rod 34. The wafers 30 are immersed in the melt 38 in crucible 40. The radiation shields 12, 14 and 16 may have a number of various shapes and be positioned in various locations in the temperature zones identified above.

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High Temperature Process Furnace

A high temperature multi-zone process furnace 10 having stationary radiation shields 12 and 14 and tiltable radiation shield 16 is suitable for growing epitaxial layers of garnet materials on wafers, as shown in the drawing. The furnace 10 includes an outer insulative layer 18, a liner 19 and heating elements 20 to heat temperature zones 22, 24, 26 and 28. A plurality of wafers 30 are mounted in wafer holder 32 that is attached to dipping rod 34. Mobile radiation shields 36 are also attached to rod 34. The wafers 30 are immersed in the melt 38 in crucible 40. The radiation shields 12, 14 and 16 may have a number of various shapes and be positioned in various locations in the temperature zones identified above. The furnace 10 permits the temperatures in the various heating zones to be controlled in such a manner that the vertical temperature profile between the melt temperature portions A, B and C can be closely controlled.

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