Browse Prior Art Database

Lateral Bipolar Transistor

IP.com Disclosure Number: IPCOM000049239D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 2 page(s) / 41K

Publishing Venue

IBM

Related People

Weinberg, ZA: AUTHOR

Abstract

A lateral bipolar transistor is provided with a narrow base through the use of a step mask and a shadow metal deposition, as shown for a silicon device in Fig. 1. This produces a narrow exposed region of the substrate layer which can be converted to proper base conductivity by ion implantation.

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Lateral Bipolar Transistor

A lateral bipolar transistor is provided with a narrow base through the use of a step mask and a shadow metal deposition, as shown for a silicon device in Fig.
1. This produces a narrow exposed region of the substrate layer which can be converted to proper base conductivity by ion implantation.

A top layout of the complete lateral bipolar transistor is shown in correlated Fig. 2.

The shadow metal deposition can be employed with a step mask to deposit metal over the base where area resistivity control implanting is desired, as shown in correlated Fig. 3.

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