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Browse Prior Art Database

Thermally Controlled Rotating Master Dome

IP.com Disclosure Number: IPCOM000049326D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 2 page(s) / 75K

Publishing Venue

IBM

Related People

Cosgrove, JF: AUTHOR [+4]

Abstract

In certain evaporation processes, Pb/Sn particularly, it is necessary that the wafer temperature be held constant to prevent damage to the product or, as in the case of Pb/Sn, to stop "meltback".

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Thermally Controlled Rotating Master Dome

In certain evaporation processes, Pb/Sn particularly, it is necessary that the wafer temperature be held constant to prevent damage to the product or, as in the case of Pb/Sn, to stop "meltback".

In the design here, as shown in Figs. 1 and 2, semiconductor wafers are loaded on the subdome. The subdome is raised (as is normally done) to nestle it into place in a master dome establishing thermal contact between the subdome (wafer dome) and the heat exchange dome or master dome. Both domes are symmetrical and rotate simultaneously.

Heat exchange and wafer attachment is effected by formed parallel H(2)O loops on the master dome to eliminate hot and cold spots on the are placed in a conventional dome. When this dome is raised into place, contact is made and the wafer dome and the master dome rotate simultaneously.

Water temperature regulation is accomplished by either a commercially available automatic mixing valve or manually adjusted valves and a thermostat. The temperature may be adjusted for the desired process application. The controlled-temperature water is fed to a ferrofluidic, rotary, water feedthrough, then enters the master dome via a circular two-chambered water manifold. Parallel water circuits are used to further insure that the temperature of the dome is constant. The water circuits are comprised of tubing bonded to the master dome; the inlet and outlets are bonded to the corresponding chambers on the wafer mani...