Browse Prior Art Database

Plasma Corrosion Inhibition

IP.com Disclosure Number: IPCOM000049329D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Potts, HR: AUTHOR

Abstract

Semiconductor products may be susceptible to corrosion when any chlorine is left on the product during processing. Residual chlorine can be removed from the product by exposing the product to a plasma with forming gas (hydrogen/nitrogen).

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Plasma Corrosion Inhibition

Semiconductor products may be susceptible to corrosion when any chlorine is left on the product during processing. Residual chlorine can be removed from the product by exposing the product to a plasma with forming gas (hydrogen/nitrogen).

The concept should be applied to device, substrate, and module manufacture. At any critical point in the process, such as after metal patterning, the product is inserted into e plasma process chamber and exposed to a plasma in forming gas. Any residual chlorine is thereby removed, and the potential for subsequent corrosion is eliminated.

1