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Structure and Fabrication of Display Panel with Globular Light Emitting Diodes

IP.com Disclosure Number: IPCOM000049333D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 3 page(s) / 59K

Publishing Venue

IBM

Related People

Chu, WK: AUTHOR [+2]

Abstract

Globular silicon beads can be formed into regular arrays from patterned polysilicon lands deposited on an insulator. Potential applications of arrays of silicon beads are solar cells, total isolation for semiconductor devices and display panels. The fabrication of globular light-emitting diodes (LEDs) and new structure of LED array is described which not only reduces the compound semiconductor material consumption significantly but also provides large display area with improved resolution.

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Structure and Fabrication of Display Panel with Globular Light Emitting Diodes

Globular silicon beads can be formed into regular arrays from patterned polysilicon lands deposited on an insulator. Potential applications of arrays of silicon beads are solar cells, total isolation for semiconductor devices and display panels. The fabrication of globular light-emitting diodes (LEDs) and new structure of LED array is described which not only reduces the compound semiconductor material consumption significantly but also provides large display area with improved resolution.

Fig. 1 shows the cross-section of a globular LED display panel made of doped III-V semiconductor (for example, GaAs). In Fig. 1, different parts of the LED structure are insulator substrate 1, deposited P-type electrode 2, via holes 2A, insulating layer 3, LED body P-type compound semiconductor 4, N-type skin 5 on LED, dielectric layer 6 such as SiO(2) N-type electrode 7, insulating filler 8, phosphor lens 9, transparent insulator 10 for passivation, external contact 11 for N-type electrode, and external contact 12 for P-type electrode.

The major steps of the array of globular LED fabrication are given as follows: (a) Preparing buried P-electrode 2 by deposition on insulating

substrate 1.

(b) Deposition of insulating layer 3 and open upon via holes 2A

at desired locations, as seen in Fig. 2.

(c) Deposition of P-doped compound semiconductor layer and etch

it into islands centered on top of the via holes 2A. Island

formation can also be made by stencil deposition or a

lift-off technique, as shown in Fig. 3.

(d) Pulsed E-beam or laser heating to convert the poly compound

semiconductor island into crystal beads 4 on top of the via

holes 2A and making contac...