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High Resolution Mask Fabrication Process Using E-Beam Lithography

IP.com Disclosure Number: IPCOM000049335D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Flachbart, RH: AUTHOR [+4]

Abstract

In order to fully realize the inherent resolution of E-beam lithography it is necessary to reduce the effects of electron scattering on neighboring images. The proposal described herein will reduce proximity effects and increase obtainable resolution in fabricated masks and reticles.

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High Resolution Mask Fabrication Process Using E-Beam Lithography

In order to fully realize the inherent resolution of E-beam lithography it is necessary to reduce the effects of electron scattering on neighboring images. The proposal described herein will reduce proximity effects and increase obtainable resolution in fabricated masks and reticles.

A resist system which utilizes resists with different exposure sensitivities is used to reduce the effect of electron backscattering on the total exposure dose received, thereby reducing proximity effects. The proposed mask layer structure is shown schematically in the drawing.

The composite polymer layer's advantage is to utilize a more sensitive electron resist (terpolymer) at the metal/polymer interface where backscattering is maximum, thereby reducing the effect of the back scattered electron contribution to total exposure dose in the imaging layer, consisting, e.g., of polymethylmethacrylate (PMMA). A further reduction of this effect will be gained by making the imaging layer as thin as possible as this layer need only remain intact during the subsequent plasma etch of the metal film to insure its image dimensions in the fabricated mask or reticle.

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