Browse Prior Art Database

Improved Photoresist Structure for Lift Off Techniques

IP.com Disclosure Number: IPCOM000049336D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 2 page(s) / 39K

Publishing Venue

IBM

Related People

Nadeau, DP: AUTHOR

Abstract

This process results in a more clearly defined metallurgy stripe deposited by lift-off techniques.

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Improved Photoresist Structure for Lift Off Techniques

This process results in a more clearly defined metallurgy stripe deposited by lift-off techniques.

In lift-off deposition of metallurgy lines, a photoresist 10 is deposited on the substrate 12 and exposed and developed to define openings 14 that define the desired metallurgy configuration. Subsequently, a layer 16 of metal is evaporated on the surface. In openings 14 the metal is deposited directly on substrate 12 and is severed from the portion of the layer 16 on the surface of resist 10.

It is desirable that resist layer 10 be provided with overhanging portions on the top edges thereof in order to avoid any interaction between the metallurgy stripe 18 formed on substrate 12. The photoresist can be given a soak treatment in chlorobenzene prior to development of the resist. This soak treatment removes solvents from the upper portion of the resist layer 10 and thus provides an overhang 20 to better define the separation of the metal layer 16. However, the resulting resist layer may retain a base protruding portion 22 that results in metal creeping up the sidewalls after the metal deposition. When the photoresist is removed, portions 24 on stripe 18 may result, as indicated in Fig. 2.

In this process the photoresist layer is again immersed into chlorobenzene after the photoresist has been patterned and etched, prior to the metal deposition. The chlorobenzene shrinks the protruding foot portion 22, resulting in ...