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SP(2)OT Modification for Polysilicon Quality Inspection

IP.com Disclosure Number: IPCOM000049338D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Barbee, SG: AUTHOR [+2]

Abstract

By adjustment of the exposure time and the lighting angle the SP(2)OT (Submicron Particulate Photographic Observation Technique) tool can be adapted for the inspection of polysilicon deposition quality to detect haze, protruberances, and included foreign material.

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SP(2)OT Modification for Polysilicon Quality Inspection

By adjustment of the exposure time and the lighting angle the SP(2)OT (Submicron Particulate Photographic Observation Technique) tool can be adapted for the inspection of polysilicon deposition quality to detect haze, protruberances, and included foreign material.

Deviating from the standard 45 degree angle of incidence and the one minute exposure shown by dashed lines in the figure, it was found that a 62 degree angle of incidence and a 1/60 of a second exposure were ideal for the detection of the above-mentioned defects.

The increased angle of incidence causes only the light of interest (which is reflected from the hillocks) to be photographed rather than the light which is reflected from the background, a mildly undulating surface. The reduced exposure time also reduces the amount of the photographed background light for improved hillock contrast.

The modified SP(2)OT permits fast, quality inspection of polysilicon depositions over large wafer areas that correlates well with previous time- consuming optical microscopy inspection.

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