Browse Prior Art Database

Method of Forming a PtSi/Al Contact to Silcon

IP.com Disclosure Number: IPCOM000049372D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 2 page(s) / 66K

Publishing Venue

IBM

Related People

Bauer, HJ: AUTHOR [+2]

Abstract

The formation of aluminum sinter spikes caused by direct contact between silicon and vapor-deposited aluminum in contact holes having overhanging walls is avoided by covering with a thin silicon dioxide layer the silicon exposed after the platinum deposition.

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Method of Forming a PtSi/Al Contact to Silcon

The formation of aluminum sinter spikes caused by direct contact between silicon and vapor-deposited aluminum in contact holes having overhanging walls is avoided by covering with a thin silicon dioxide layer the silicon exposed after the platinum deposition.

Overhang 4 in contact hole 5 (Fig. 1) is formed, e.g., by etching an SiO(2)/Si(3)N(4) double insulation layer 2 and 3 on s silicon substrate 1. The silicon surface exposed to the Pt evaporation process is partly shadowed by overhang 4 to the extent that edge 6 of the silicon surface is not covered with Pt 7 (Fig. 2).

Edge 6 is covered with a thin thermally grown SiO(2) layer 9 simultaneously with or after the formation of PtSi 8 (Fig. 3). A thin oxide layer 10 on top of PtSi 8 in the oxidizing atmosphere is removed by a subsequent sputter cleaning step that, due to its directionality, does not affect SiO(2) layer 9. SiO(2) layer 9 ensures that in the following Al evaporation the Al 11 does not come into contact with Si substrate 1, thus avoiding the formation of Al sinter spikes.

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