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Method of Influencing the Etch Rate of PECVD Films and Applications of the Method

IP.com Disclosure Number: IPCOM000049373D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Hinkel, H: AUTHOR [+5]

Abstract

The etch rate of PECVD (plasma enhanced chemical vapor deposition) films formed of hydrogen-containing compounds is decreased by ion irradiation.

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This is the abbreviated version, containing approximately 100% of the total text.

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Method of Influencing the Etch Rate of PECVD Films and Applications of the Method

The etch rate of PECVD (plasma enhanced chemical vapor deposition) films formed of hydrogen-containing compounds is decreased by ion irradiation.

Films of materials like Si, SiN(x), SiO(x)N(y), SiO(x), SiC(x) and BN(x) are formed by PECVD on a substrate. Irradiation with ions reduces the etch rate of these films in dry end Set etching processes. Silicon nitride films e.g., irradiated with Ar(+)-ions of 60 and 150 keV and a dose of 5 x 10(15) ions/cm , and etched with 10:1 buffered HF were etched with a rate of 0.02 nm/sec. This result was obtained with films having thicknesses of 3 and 40 nm. Under the same etching conditions silicon nitride films that had not been irradiated had an etch rate of
0.11 nm/sec.

By selective irradiation of the films the method can be used to form patterned thin films on substrates without a mask. The patterned films can serve as inorganic masks in etching, deposition, and implantation processes, as structured insulating layers or conductive patterns.

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