Browse Prior Art Database

Evaporated Polycrystalline This Film Materials For Optical Memories Based Upon Photochemical Hole Burning

IP.com Disclosure Number: IPCOM000049427D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Bjorklund, GC: AUTHOR [+3]

Abstract

A method for producing polycrystalline materials that are useful in photochemical hole burning (PHB) optical memories includes the simultaneous vapor deposition of a single or several different types of host materials and an optional doping material simultaneously. Host material NaF was evaporated on a glass substrate and then colored with X rays. It was determined that the inhomogeneous linewidth of the 5456 A zero phenon line (ZPL) of the F(3)/+/ center and the 6070 A ZPL of the N(1) center in the evaporated NaF sample were an order of magnitude larger than for single crystal samples. This polycrystalline sample did not have any of the deleterious self-bleaching effects that have been previously observed in the multihole burning of single crystal samples.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 74% of the total text.

Page 1 of 1

Evaporated Polycrystalline This Film Materials For Optical Memories Based Upon Photochemical Hole Burning

A method for producing polycrystalline materials that are useful in photochemical hole burning (PHB) optical memories includes the simultaneous vapor deposition of a single or several different types of host materials and an optional doping material simultaneously. Host material NaF was evaporated on a glass substrate and then colored with X rays. It was determined that the inhomogeneous linewidth of the 5456 A zero phenon line (ZPL) of the F(3)/+/ center and the 6070 A ZPL of the N(1) center in the evaporated NaF sample were an order of magnitude larger than for single crystal samples. This polycrystalline sample did not have any of the deleterious self-bleaching effects that have been previously observed in the multihole burning of single crystal samples.

The steps in this method can be modified or varied to provide (a) lattice disordering, (b) alloying, (c) doping and (d) multilayered samples.

Lattice disordering can be obtained by changing the temperature of the substrate during the deposition so as to alter the rate of epitaxial growth. Lattice disordering results in an increase in the lattice strain which in turn causes a broadening of the inhomogeneous linewidth of the ZPL.

Alloying is obtained when the host material consists of a mixture of different host materials. Alloying permits multiplexing of ZPLs.

Doping the host material with specific impuriti...