Browse Prior Art Database

Silicon Nitride as Backside Protection During Substrate Processing

IP.com Disclosure Number: IPCOM000049671D
Original Publication Date: 1982-Jul-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Elias, KL: AUTHOR

Abstract

During the processing of ceramic substrates to form mounting bases for integrated circuit chips, there are many operations performed on the top surface of the substrate to prepare it for reception of the chips. During these process steps, it is necessary to protect the backside of the substrate from being affected by these operations. It has been found that silicon nitride, plasma deposited to a thickness of 5,000 angstroms, 30,000 angstroms, provides the necessary backside protection. After the processing of the substrate is completed, the silicon nitride can be removed by plasma etching in a mixture of CF(4) and O(2).

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Silicon Nitride as Backside Protection During Substrate Processing

During the processing of ceramic substrates to form mounting bases for integrated circuit chips, there are many operations performed on the top surface of the substrate to prepare it for reception of the chips. During these process steps, it is necessary to protect the backside of the substrate from being affected by these operations. It has been found that silicon nitride, plasma deposited to a thickness of 5,000 angstroms, 30,000 angstroms, provides the necessary backside protection. After the processing of the substrate is completed, the silicon nitride can be removed by plasma etching in a mixture of CF(4) and O(2).

1