Browse Prior Art Database

Plasma Ashing of Polymide

IP.com Disclosure Number: IPCOM000049673D
Original Publication Date: 1982-Jul-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Caruccio, F: AUTHOR [+5]

Abstract

It has been found that RF plasma etching of cured polyimide in n in an oxygen atmosphere for about 30 seconds modifies the surface properties of the polyi-mide to improve the adhesion of metals to the polyimide surface. This plasma etching also improves the electrical characteristics by decreasing the surface leakage between conductors. These improvements are accomplished by virtue of the etching process, removing a very thin layer (about 100 Angstroms) of surface material which has been contaminated or disturbed during prior processing.

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Plasma Ashing of Polymide

It has been found that RF plasma etching of cured polyimide in n in an oxygen atmosphere for about 30 seconds modifies the surface properties of the polyi-mide to improve the adhesion of metals to the polyimide surface. This plasma etching also improves the electrical characteristics by decreasing the surface leakage between conductors. These improvements are accomplished by virtue of the etching process, removing a very thin layer (about 100 Angstroms) of surface material which has been contaminated or disturbed during prior processing.

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