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Applications of Polymides as Lithographic Resists

IP.com Disclosure Number: IPCOM000049790D
Original Publication Date: 1982-Jul-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Duran, J: AUTHOR [+2]

Abstract

High temperature flow resistant positive photoresists and negative electron beam resists are made of polyimides like poly (tetramethyl benzidine benzenetetracarboxylic anhydride) and poly(tetramethyl benzidine benzophenone tetracarboxylic anhydride), into which a photoactive compound is dissolved.

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Applications of Polymides as Lithographic Resists

High temperature flow resistant positive photoresists and negative electron beam resists are made of polyimides like poly (tetramethyl benzidine benzenetetracarboxylic anhydride) and poly(tetramethyl benzidine benzophenone tetracarboxylic anhydride), into which a photoactive compound is dissolved.

The photoactive compounds used are mono- and dihydroxy benzophenone derivatives of 2 diezo orthonaphthoquinone 5-sulfonyl chloride.

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