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Method of Producing the Hold Field for a Bubble Memory

IP.com Disclosure Number: IPCOM000049796D
Original Publication Date: 1982-Jul-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Harrison, CG: AUTHOR

Abstract

A method of producing a hold field for a bubble memory device involves forming an exchange-coupling between a permalloy film and a sputtered antiferromagnetic FeMn film. This exchange-coupling eliminates the need to tilt the substrate. A specific example of this method includes the following steps: a. Sputter 600 Angstroms to 1000 Angstroms of Cu onto the substrates. b. Sputter 400 Angstroms of FeMn on top of (a). c. Sputter 4000 Angstroms of permalloy on top of (b). d. Sputter 400 Angstroms of FeMn on top of (c). e. Magnetically anneal the permalloy/FeMn structure at 250 degrees C in a 19 Oe field. f. Form the overlay bubble propagation pattern by creating a titanium mask and sputter etching the unwanted FeMn and permalloy at a low temperature.

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Method of Producing the Hold Field for a Bubble Memory

A method of producing a hold field for a bubble memory device involves forming an exchange-coupling between a permalloy film and a sputtered antiferromagnetic FeMn film. This exchange-coupling eliminates the need to tilt the substrate. A specific example of this method includes the following

steps:

a. Sputter 600 Angstroms to 1000 Angstroms of Cu onto the

substrates.

b. Sputter 400 Angstroms of FeMn on top of (a).

c. Sputter 4000 Angstroms of permalloy on top of (b).

d. Sputter 400 Angstroms of FeMn on top of (c).

e. Magnetically anneal the permalloy/FeMn structure at 250

degrees C in a 19 Oe field.

f. Form the overlay bubble propagation pattern by creating a

titanium mask and sputter etching the unwanted FeMn and

permalloy at a low temperature.

All of the sputtering except the Cu is done in a magnetic field oriented in the direction of the holding field.

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