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Improved MBE Source Using High Temperature Intermediate Substrate

IP.com Disclosure Number: IPCOM000049845D
Original Publication Date: 1982-Jul-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Freeouf, JL: AUTHOR [+4]

Abstract

Sources of materials used in connection with molecular beam epitaxy (MBE) can be delivered in the proper species, with appropriate purity end with minimal supply exhaustion, by using external gases, an intermediate substrate and high temperature thermochemistry.

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Improved MBE Source Using High Temperature Intermediate Substrate

Sources of materials used in connection with molecular beam epitaxy (MBE) can be delivered in the proper species, with appropriate purity end with minimal supply exhaustion, by using external gases, an intermediate substrate and high temperature thermochemistry.

The external supply of the source material in gaseous form is introduced into the molecular beam epitaxy reactor through a heated tube of a material, such as sapphire, that serves to thermally decompose the gas, such as Ga(CH(3))(3) and WF(6), into the preferred species and to serve to collect all undesirable contaminants or by-products. The external gas supplies can be changed without interrupting operation.

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