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Thermally Stable Sensitizers for use in Optical and Electron Beam Resist Systems

IP.com Disclosure Number: IPCOM000049881D
Original Publication Date: 1982-Aug-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 2 page(s) / 17K

Publishing Venue

IBM

Related People

Thayer, AL: AUTHOR

Abstract

Silicon and phosphorous derivatives of diazomethane (CH(2)N(2) exhibit enhanced thermal stability of the diazo moiety while retaining the radiation sensitivity of the parent compound. The silicon derivatives in particular have strong absorption maxima in the deep UV region of the electromagnetic spectrum, making them attractive candidates for use as sensitizers in deep UV resists. Silicon and phosphorous compounds of the general type (shown) with the appropriate choice of R substitution, can be employed as radiation sensitive additives, to act alone or in a synergistic manner, in lithographic materials used as optical or E-beam resists for integrated circuit manufacture.

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Thermally Stable Sensitizers for use in Optical and Electron Beam Resist Systems

Silicon and phosphorous derivatives of diazomethane (CH(2)N(2) exhibit enhanced thermal stability of the diazo moiety while retaining the radiation sensitivity of the parent compound.

The silicon derivatives in particular have strong absorption maxima in the deep UV region of the electromagnetic spectrum, making them attractive candidates for use as sensitizers in deep UV resists. Silicon and phosphorous compounds of the general type (shown) with the appropriate choice of R substitution, can be employed as radiation sensitive additives, to act alone or in a synergistic manner, in lithographic materials used as optical or E-beam resists for integrated circuit manufacture.

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