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New Mask and Process Change for Products Containing Low Barrier Schottky Diode for Compatibility with Ion Implant Emitters

IP.com Disclosure Number: IPCOM000049884D
Original Publication Date: 1982-Aug-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Marinaccio, FA: AUTHOR [+3]

Abstract

The state of the art for the ion-implant emitter is not compatible with chips that contain low barrier Schottky diodes. Using the current ion implant emitter process, the anode of the low barrier Schottky diode would contain insufficient oxide to prevent platinum silicide formation, hence, the diode would be a high barrier Schottky diode.

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New Mask and Process Change for Products Containing Low Barrier Schottky Diode for Compatibility with Ion Implant Emitters

The state of the art for the ion-implant emitter is not compatible with chips that contain low barrier Schottky diodes. Using the current ion implant emitter process, the anode of the low barrier Schottky diode would contain insufficient oxide to prevent platinum silicide formation, hence, the diode would be a high barrier Schottky diode.

A solution to the low barrier Schottky diode's incompatibility with ion-implant emitters involves use of a mask that opens all contacts except the anode of the low barrier Schottky diode.

Reactive ion etching with a gas that selectively etches silicon oxide is used to etch the base regions to silicon using the above mask.

The remaining contacts are opened using standard wet etch techniques. Both of these etches would be done with the resist in place.

This method minimizes the lateral undercut necessary for emitter implanting while utilizing one masking step to open all the contacts to silicon except the anode.

After platinum evaporation, a photo-masking step with an oxide etch would be used to remove the oxide in the low barrier Schottky anode. The low barrier Schottky diode now can be made using standard processes.

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