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Contrast Enhancement in Positive Working Resist Systems

IP.com Disclosure Number: IPCOM000049895D
Original Publication Date: 1982-Aug-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Thayer, AL: AUTHOR

Abstract

Diazoquinone substituted benzophenone positive working resist systems are subject to severe resist film thinning in unexposed resist areas when subjected to the long developing times necessary when these materials are used as positive working electron beam resists. This resist thinning results in a loss of contrast (low R/R(o)) and thus in lithographically poor images.

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Contrast Enhancement in Positive Working Resist Systems

Diazoquinone substituted benzophenone positive working resist systems are subject to severe resist film thinning in unexposed resist areas when subjected to the long developing times necessary when these materials are used as positive working electron beam resists. This resist thinning results in a loss of contrast (low R/R(o)) and thus in lithographically poor images.

The addition of polyethers or polyether alcohols (cyclic or acyclic), at a 0.5- 2.0% level by weight, to the resist system results in a ten fold reduction in R(o) of unexposed resist films, and enhanced contrast.

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