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Sensitized Poly(Olefin Sulfones) as Dry Developable, Mid and Deep UV Photoresists

IP.com Disclosure Number: IPCOM000049951D
Original Publication Date: 1982-Aug-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Hiraoka, H: AUTHOR [+2]

Abstract

Poly(butene-1-sulfone) can be used as a dry developable, positive tone photoresist with fairly high resolution and with high sensitivity. With a proper choice of photosensitizer, the resists will be used as mid-UV photoresist, and/or deep-UV photoresist with positive tone; p-NO(2)-pyridine N-oxide for mid-UV, pyridine N-oxide as a deep UV sensitizer, or an aromatic bisazide which is extracted from a negative-tone deep UV photoresist. These are cross-linking agents, but here they are used as positive working photosensitizers, With an increase of photosensitizer concentrations, the resist plasma resistance increases. Because poly-(butene-1-sulfone) does NOT have any UV-absorption, the primary photoreactions must be originated by the photosensitizers. By choosing suitable sensitizers, a whole range of UV-light can can be used.

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Sensitized Poly(Olefin Sulfones) as Dry Developable, Mid and Deep UV Photoresists

Poly(butene-1-sulfone) can be used as a dry developable, positive tone photoresist with fairly high resolution and with high sensitivity. With a proper choice of photosensitizer, the resists will be used as mid-UV photoresist, and/or deep-UV photoresist with positive tone; p-NO(2)-pyridine N-oxide for mid-UV, pyridine N-oxide as a deep UV sensitizer, or an aromatic bisazide which is extracted from a negative-tone deep UV photoresist. These are cross-linking agents, but here they are used as positive working photosensitizers, With an increase of photosensitizer concentrations, the resist plasma resistance increases. Because poly-(butene-1-sulfone) does NOT have any UV-absorption, the primary photoreactions must be originated by the photosensitizers. By choosing suitable sensitizers, a whole range of UV-light can can be used.

Developments of images can be carried out by simple post-baking only, that is, heating the wafers for 7 minutes at 100 degrees C, or by a conventional wet development following the post-bake for a shorter time. This simple post-bake development, 7 minutes at 100 degrees C in air, almost completely develops the images, but small undeveloped layers are to be ashed or removed by an oxygen plasma.

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