Browse Prior Art Database

Plasma or Ion Profile Indicator

IP.com Disclosure Number: IPCOM000049980D
Original Publication Date: 1982-Aug-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Brosious, PR: AUTHOR [+2]

Abstract

Since plasma and ion beam processing is widely used in the electronics industry, plasma or ion uniformity or profiles are of great interest. Conventional ways of examining the ion or plasma profile include emission spectroscopy, electron microscopy, etc. The methods usually involve expensive equipment and/or time consuming techniques. A simple but versatile method to indicate plasma or ion profiles is provided.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 66% of the total text.

Page 1 of 1

Plasma or Ion Profile Indicator

Since plasma and ion beam processing is widely used in the electronics industry, plasma or ion uniformity or profiles are of great interest. Conventional ways of examining the ion or plasma profile include emission spectroscopy, electron microscopy, etc. The methods usually involve expensive equipment and/or time consuming techniques. A simple but versatile method to indicate plasma or ion profiles is provided.

The basic idea is to select a proper thin film material for the specific gas used for the plasma or ion source. This material should be electrically conductive so that the resistance of this thin film can be easily measured. The thin film can be properly patterned for optimum sensitivity of the measurement. This material interacts with the plasma, and the measured resistance changes due to (1) plasma etching and plasma deposition (change of thin film thickness), and (2) plasma interaction (change of composition). Plasma or ion non-uniformity is indicated by the non-uniform change of resistance of thin films.

Substrates with the thin film properly patterned with photoresist or some masking technique can be loaded in the processing system. After some plasma or ion exposure, these substrates are unloaded for testing. A simple resistance measurement of the thin film patterns, which can be conducted speedily at room temperature, can indicate the plasma profile very quickly. With automated testing equipment, one can test more than...