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Aluminum Ternary Silicides

IP.com Disclosure Number: IPCOM000049991D
Original Publication Date: 1982-Aug-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Ho, PS: AUTHOR

Abstract

Ternary silicides formed by reacting Al and a second metal with Si can be used for shallow junction contacts and for conductor lines with good conductivity.

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Aluminum Ternary Silicides

Ternary silicides formed by reacting Al and a second metal with Si can be used for shallow junction contacts and for conductor lines with good conductivity.

Silicides are usually produced in a binary form by reacting a metal with Si, e.g., Pd(2)Si, PtSi, NiSi(2). Al behaves quite similarly to Si in its chemical reaction with other metals in forming compounds, e.g., Al(3)Ti, Al Pd (See, for instance, J.K. Howard et al, J. Vac. Sci. Tech. 13, 68 (1976). When Al is mixed with Si. and a second metal, material reactions caused by annealing frequently lead to the formation of a ternary silicide. Such compounds are known to exist for a number of transition metals and refractory metals, e.g., Cr, Fe, Hf, Mo, Nb, Ni, Pd, Pt, Ti, Ta, V, W, Zr. (An illustrative reference is the Landolt-Bornstein Handbook Series, Group III: Crystal and Solid State Physics, Vol. 6, edited by P. Eckerlin et al, Springer-Verlag, Berlin, 1971, pp. 222-275).

Methods compatible with the thin film technology used in manufacturing semiconductor devices are described for making the Al ternary silicide compounds, examples of which are:
1. Coevaporating Al and a second metal on Si substrate, and

then annealing to form ternary silicide.
2. Depositing Al onto a binary silicide, and then reacting to

form ternary silicide.
3. Coevaporating Al, a second metal and Si onto a substrate,

and then annealing to form ternary silicide.

Variations of such methods can be obtained by varying...