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GaAs Ohmic Contact

IP.com Disclosure Number: IPCOM000049998D
Original Publication Date: 1982-Aug-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Heiblum, M: AUTHOR [+2]

Abstract

A new contact metallurgy of AuSi is provided. The Si-Au binary alloy forms a eutectic mixture (31% - 69%, respectively) which melts at 370 degrees C, which temperature is low enough, and convenient for alloying. Ohmic contacts of Ni-AuSi-SiO(2) of 50 Angstroms - 125 angstroms - 580 angstroms- 1,000 angstroms, respectively, are formed by evaporating on a 1 micrometer epi layer of 9x10/16/ cu cm doped GaAs. The contacts are alloyed at 450 degrees C for 30 seconds in a forming gas environment.

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GaAs Ohmic Contact

A new contact metallurgy of AuSi is provided. The Si-Au binary alloy forms a eutectic mixture (31% - 69%, respectively) which melts at 370 degrees C, which temperature is low enough, and convenient for alloying. Ohmic contacts of Ni- AuSi-SiO(2) of 50 Angstroms - 125 angstroms - 580 angstroms- 1,000 angstroms, respectively, are formed by evaporating on a 1 micrometer epi layer of 9x10/16/ cu cm doped GaAs. The contacts are alloyed at 450 degrees C for 30 seconds in a forming gas environment.

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