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Wave Guides Using Graphoepitaxy Structures

IP.com Disclosure Number: IPCOM000049999D
Original Publication Date: 1982-Aug-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 2 page(s) / 35K

Publishing Venue

IBM

Related People

Hovel, HJ: AUTHOR [+2]

Abstract

GaAs films grown on Si substrates containing geometrical features such as grooves can be recrystallized into very large, oriented grain regions, depending on the dimensions of the grooves and the film thickness. Regions with groove spacings small compared to film thickness can have a single large continuous grain, while regions with large groove dimensions coated with materials that do not wet well, such as SiO(2), result in GaAs regions contained within the grooves. Flat regions between grooves become totally denuded of GaAs. This is shown pictorially in Fig. 1.

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Wave Guides Using Graphoepitaxy Structures

GaAs films grown on Si substrates containing geometrical features such as grooves can be recrystallized into very large, oriented grain regions, depending on the dimensions of the grooves and the film thickness. Regions with groove spacings small compared to film thickness can have a single large continuous grain, while regions with large groove dimensions coated with materials that do not wet well, such as SiO(2), result in GaAs regions contained within the grooves. Flat regions between grooves become totally denuded of GaAs. This is shown pictorially in Fig. 1.

The structure provides optical guides, since the refactive index of Si and GaAs, and in particular of any intermediate dielectric layer such as SiO(2) or TiO(2) are different. Optical multiplexing can be simplified with this structure by designing the geometrical patterns in the graphoepitaxy substrate, as shown in Fig. 2 and in cross section in Fig. 3.

Total internal refelection and choice of the optical material provide for low loss. Optical devices such as light-emitting diodes can be put on the end of the guide to provide the optical source, and light can be directed downward into the Si where desired.

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