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Tandem Solar Cells Using Graphoepitaxy Processing

IP.com Disclosure Number: IPCOM000050000D
Original Publication Date: 1982-Aug-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Hovel, HJ: AUTHOR [+2]

Abstract

Substrates with geometrical surface features, when epitaxial films are grown thereon and recrystallized in a technique known as "graphoepitaxy", provide large grain-oriented layers containing the surface features useful for solar devices.

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Tandem Solar Cells Using Graphoepitaxy Processing

Substrates with geometrical surface features, when epitaxial films are grown thereon and recrystallized in a technique known as "graphoepitaxy", provide large grain-oriented layers containing the surface features useful for solar devices.

The growth of subsequent layers provides tandem solar energy devices with the subsequent layer mirroring the grain size and orientation of the lower layer.

Layers of Ge, Si and GaAs are grown on quartz substrates.

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