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Inert Ion Implanted Schottky Barrier Diode

IP.com Disclosure Number: IPCOM000050061D
Original Publication Date: 1982-Sep-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 2 page(s) / 36K

Publishing Venue

IBM

Related People

Bergeron, DL: AUTHOR

Abstract

An inert element implant is used at the semiconductor metal interface of a Schottky diode for controlling the barrier height and ideality. The inert elements or species may include Ar, He, Ne, Kr, Xe and Rn. The implant, followed by a low temperature 300-600 degrees C anneal, provides improved diode stability and tolerance and an exponential load characteristic.

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Inert Ion Implanted Schottky Barrier Diode

An inert element implant is used at the semiconductor metal interface of a Schottky diode for controlling the barrier height and ideality. The inert elements or species may include Ar, He, Ne, Kr, Xe and Rn. The implant, followed by a low temperature 300-600 degrees C anneal, provides improved diode stability and tolerance and an exponential load characteristic.

The implant may be with or without a screen oxide, and at a low dose, e.g.,
1.5 x 10/13/ atoms/cm/2/, the diodes exhibit characteristics 1 x 10/15/ atoms/cm/2/, the diodes exhibit characteristics consistent with a combination of thermionic and tunneling emission mechanisms. These diodes may be used as extremely dense exponential loads and, when fabricated on an N epitaxial layer, they can be merged with an NPN bipolar transistor, as illustrated in Fig. 1, with no increase in device area. The schematic circuit of the Structure illustrated in Fig. 1 is shown in Fig. 2.

It can be seen from Fig. 1 that the emitter, base and collector regions 10, 12 and 14, respectively, of the NPN transistor are formed in N type epitaxial layer 16 grown on silicon substrate 18 in the conventional manner with an electrode 20 contacting emitter region 10 and electrode 22 contacting base region 12. The inert element implant is introduced at a high dose through the surface of N type epitaxial layer 16 into region 24 at the opening 26 in silicon dioxide layer 28 and a diode metal electrod...