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Polyimide Ion Implantation Masking Technique

IP.com Disclosure Number: IPCOM000050062D
Original Publication Date: 1982-Sep-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Brown, RL: AUTHOR [+2]

Abstract

High dose/high power ion implants are carried out by using an organic polymer mask, such as a polyimide mask.

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Polyimide Ion Implantation Masking Technique

High dose/high power ion implants are carried out by using an organic polymer mask, such as a polyimide mask.

As indicated in Fig. 1, a layer of polyimide 10 is deposited on the surface of a silicon substrate 12, e.g., of P type conductivity, and a photoresist layer 14, having a desired pattern including opening 16, is formed therein. By using reactive ion etching techniques, the pattern formed in photoresist layer 14 is etched into the polyimide layer 10, providing a steep walled opening 18 in layer
10. The photoresist layer 14 is then removed with the use of any appropriate solvent.

Any desired ions 20 may then be implanted into the substrate 12, producing an impurity region 22, as illustrated in Fig. 2, having a sharply defined profile. The polyimide mask may be very thin even when high dose/high power ion implants are required, and the mask is resistant to high temperatures. Thus, by using this thin polyimide mask, there is no need for metal or thick oxide masks which often produce process complications.

The polyimide mask, i.e., layer 10, may be easily stripped, as is known, in an oxygen plasma.

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