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Schottky Barrier Diode

IP.com Disclosure Number: IPCOM000050067D
Original Publication Date: 1982-Sep-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Goins, EW: AUTHOR [+2]

Abstract

A Schottky barrier diode is provided with reduced series resistance and increased active area without the use of an additional mask or additional planar surface.

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Schottky Barrier Diode

A Schottky barrier diode is provided with reduced series resistance and increased active area without the use of an additional mask or additional planar surface.

As illustrated in the figure, an N type epitaxial layer 10 is grown on a P type semiconductor substrate 12 with an N+ subcollector 14 formed at the interface between the layer 10 and substrate 12. On the surface of the epitaxial layer 10, there are formed multiple insulating layers 16 made of silicon dioxide and silicon nitride with an opening 18 provided therein. By using a suitable anisotropic etch, as is well known, a V-groove or truncated V-groove 20 is formed in the epitaxial layer 10 at the opening 18. The etch is self limiting if permitted to etch to completion to form a V-groove, but, if desired, the etching may be timed to form a truncated V-groove, as illustrated in the figure. The etch used may include a mixture of potassium hydroxide, water and isopropanol. A layer of aluminum or other suitable metal 22 is deposited within the opening 18 to complete the diode structure.

Depending upon the size of the Schottky barrier diode, reductions in series resistance in the epitaxial layer 10, between the aluminum layer 22 and the subcollector 14, greater than 60 percent can be achieved. A reach through 24 may be provided to contact the subcollector 14.

The density improvement is realized due to the increase, approximately 40 percent, in contact area between the aluminum layer 22 a...