Browse Prior Art Database

Reduction of Collector Emitter Leakage by Ion Implantation of Sub Collectors

IP.com Disclosure Number: IPCOM000050104D
Original Publication Date: 1982-Sep-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Cavanagh, RA: AUTHOR [+4]

Abstract

High doses of arsenic must be deposited in subcollector regions to ensure low resistivity and proper device performance. Capsule processing of subcollectors requires very high (approximately 2.5 x 10/16/ /cm/2/) nominal doses of arsenic in order to maintain distribution tails of resistivity within device specifications. These very high doses lead to clustering of inactive arsenic near the surface of subcollector regions and interfere with epitaxial growth of silicon over these regions. These epitaxial defects result in collector emitter leakage paths and impact device yields.

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Reduction of Collector Emitter Leakage by Ion Implantation of Sub Collectors

High doses of arsenic must be deposited in subcollector regions to ensure low resistivity and proper device performance. Capsule processing of subcollectors requires very high (approximately 2.5 x 10/16/ /cm/2/) nominal doses of arsenic in order to maintain distribution tails of resistivity within device specifications. These very high doses lead to clustering of inactive arsenic near the surface of subcollector regions and interfere with epitaxial growth of silicon over these regions. These epitaxial defects result in collector emitter leakage paths and impact device yields.

Ion implantation of subcollectors results in much tighter distributions of resistivity which allows for lowering the nominal dosage while still maintaining resistivity distributions within device specifications. The reduced dosage reduces the occurrence of arsenic clustering and results in improved collector emitter leakage limited yield.

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