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Novel Approach to Completely Dry Lithography

IP.com Disclosure Number: IPCOM000050106D
Original Publication Date: 1982-Sep-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Mathad, GS: AUTHOR [+3]

Abstract

This article describes a dry lithography method for patterning a photoresist mask which may subsequently be used in the fabrication of semiconductor devices. Additionally, the article describes resist compositions particularly suited for use in the method described. The method features deposition, exposure and dry developing of the resist which may then be transformed into a SiO(X) type mask on exposure to an oxygen plasma. Resists suited for use in the method feature the inclusion of organic silicon compounds, i.e., silanes.

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Novel Approach to Completely Dry Lithography

This article describes a dry lithography method for patterning a photoresist mask which may subsequently be used in the fabrication of semiconductor devices. Additionally, the article describes resist compositions particularly suited for use in the method described. The method features deposition, exposure and dry developing of the resist which may then be transformed into a SiO(X) type mask on exposure to an oxygen plasma. Resists suited for use in the method feature the inclusion of organic silicon compounds, i.e., silanes.

Silanes, with the proper choice of organic functionality, coupled with an optimal silicon to oxygen ratio in the monomer, when polymerized under the influence of radio frequency or microwave discharge, produce polymeric films, which, depending upon the structure, undergo degradation or cross-linking when exposed to E-beam, ultraviolet or X-ray radiation. Silanes carrying aromatic or potentially cross linkable substitutes yield films relatively resistant to CHF(3) or CF(4) plasmas, while the reverse holds true for aliphatic or noncrosslinkable functionality.

In accordance with the method of this article, a silane resist film is first plasma deposited on a substrate to be masked. Thereafter, the pattern to be transferred to the mask is imaged on the film using an E-beam, ultraviolet light or X-ray radiation. Following imaging, the resist is dry developed in a plasma of CHF(3) or CF(4). Finally, the...