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Hybrid Formed Metal Layer for MCP Substrate

IP.com Disclosure Number: IPCOM000050279D
Original Publication Date: 1982-Oct-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Abolafia, OR: AUTHOR [+2]

Abstract

A metal layer of a multilayer metallization structure is formed as a hybrid consisting of a first part formed by sputtering and a second part formed by evaporation of the remainder of the layer on the first part.

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Hybrid Formed Metal Layer for MCP Substrate

A metal layer of a multilayer metallization structure is formed as a hybrid consisting of a first part formed by sputtering and a second part formed by evaporation of the remainder of the layer on the first part.

The hybrid-formed layer is advantageous for forming the Cu layer of the Cr- Cu-Cr M2 layer of a multilayer integrated circuit (IC) substrate of the metallized ceramic polyimide (MCP) type, such as the one described in "Process for Making Multilayer IC Substrate," J. Gow 3rd et al, IBM Technical Disclosure Bulletin, September 1979, pp. 1420-1421, and May 1981, p. 5642. The process described therein is modified such that the M2 bottom Cr is formed by blanket sputtering Cr on top of the polyimide layer to an approximate thickness of 200- 800 angstroms, for example. Next, the M2 Cu layer is formed by first blanket sputtering Cu on top of the M2 bottom Cr layer to an approximate thickness of 1000 angstroms, for example; and then the rest of the M2 Cu layer is formed by blanket evaporating Cu on the sputtered Cu to an approximate thickness of 80,000 angstroms, for example. The M2 top Cr is thereafter blanket deposited by evaporation, or, alternatively, in some cases by sputtering, on top of the evaporated Cu to a corresponding thickness of the M2 bottom Cr.

Cracking of the underlying polyimide layer due to thermal stress is substantially mitigated as a result of the concomitant lower temperatures associated with the...