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Method for Interrupt of Melt Rotation and Control of Oxygen Concentration in Czochralski Silicon Crystal Growth

IP.com Disclosure Number: IPCOM000050290D
Original Publication Date: 1982-Oct-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 2 page(s) / 56K

Publishing Venue

IBM

Related People

Kim, KM: AUTHOR [+3]

Abstract

An arrangement is provided for interrupting rotation of the melt in the Czochralski (CZ) silicon crystal growth by interchanging two phases of a three-phase AC power input to a cylindrical (graphite) heater. The interrupt of the melt rotation of this method (MI) causes, in a similar way as in the well-established "Crucible Rotation Interrupt" (CI) (*), a uniform mixing in the melt, and results in an increased incorporation of oxygen in the growing CZ silicon crystal.

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Method for Interrupt of Melt Rotation and Control of Oxygen Concentration in Czochralski Silicon Crystal Growth

An arrangement is provided for interrupting rotation of the melt in the Czochralski (CZ) silicon crystal growth by interchanging two phases of a three- phase AC power input to a cylindrical (graphite) heater. The interrupt of the melt rotation of this method (MI) causes, in a similar way as in the well-established "Crucible Rotation Interrupt" (CI) (*), a uniform mixing in the melt, and results in an increased incorporation of oxygen in the growing CZ silicon crystal.

Figs. 1 and 2 illustrate schematically a CZ silicon crystal growth arrangement using a cylindrical heater 1 which is heated by a three-phase AC power input 2 (Fig. 3). Rotation 3 of the melt is induced by a hydro-electromagnetic coupling in the melt 4, which is contained in a fused silica crucible 5 being supported by a graphite susceptor 6. The principle of the electromagnetically induced melt rotation is similar to the operation of an AC motor consisting of a field and armature.

The rotation of the melt can be decelerated and accelerated by periodically interchanging two of the three phases by means of a relay 7 or solid-state switch 8, which is illustrated schematically in Fig. 3A. The solid-state switch may, for example, be constructed of back to back silicon-controlled rectifiers which are gated to control both the direction and intensity of the rotating magnetic field, and derivative...