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Ion Implant Emitter, Low Barrier Schottky Diode Process

IP.com Disclosure Number: IPCOM000050295D
Original Publication Date: 1982-Oct-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Forneris, JL: AUTHOR [+2]

Abstract

This is a proposal for the fabrication of low barrier Schottky diodes with an existing ion-implant emitter (I/2/E) process.

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This is the abbreviated version, containing approximately 78% of the total text.

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Ion Implant Emitter, Low Barrier Schottky Diode Process

This is a proposal for the fabrication of low barrier Schottky diodes with an existing ion-implant emitter (I/2/E) process.

An existing I/2/E process sequence, which is outlined below, was found not to be compatible with fabricating low barrier Schottky diodes. During the two mask steps employed for the I/2/E process, the normal etching of the oxide opens all contact holes in silicon. Typically, the first mask step opens the contacts over the thin oxide regions, i.e., the base and emitter, while the second masking operation opens the contacts over the thick oxide fields, i.e., to the collector and Schottky regions. Subsequent processing through emitter implant, annealing, platinum evaporation and heat treating forms the emitter regions and also the collector and high barrier Schottky diode contacts. With the above process sequence, however, no oxide remains over the low barrier Schottky region to protect it during the platinum evaporation process. In this instance, the platinum-silicide formation on the anode of the low barrier Schottky region would then result in the formation of a high barrier Schottky device.

To provide adequate oxide passivation over the low barrier Schottky anode prior to platinum evaporation, an additional masking step is added between the two-step mask process described above to protect the low barrier Schottky field oxide.

The mask used is a "negative" of the actual mask pattern that...