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Browse Prior Art Database

Improved Ion Implant Emitter Process

IP.com Disclosure Number: IPCOM000050296D
Original Publication Date: 1982-Oct-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Planck, RE: AUTHOR [+2]

Abstract

This is a proposal for an ion-implant emitter process implementation which allows a sufficient amount of oxide remaining in contact areas to achieve compatibility with low barrier Schottky diodes to be used.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 81% of the total text.

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Improved Ion Implant Emitter Process

This is a proposal for an ion-implant emitter process implementation which allows a sufficient amount of oxide remaining in contact areas to achieve compatibility with low barrier Schottky diodes to be used.

The state of the art for an ion-implant emitter is not compatible with chips that contain low barrier Schottky diodes. Using, for instance, a current ion-implant emitter process, the anode of the low barrier Schottky diode would contain insufficient oxide to prevent platinum silicide formation; hence, the diode would be a high barrier Schottky diode.

A solution to the low barrier Schottky diode's imcompatibility with ion-implant emitters would involve an increase of the epi (epitaxial) oxide thickness. This change requires no additional masking steps. The thicker epi oxide is compatible with the conventional sequence of processing steps. Some of the oxide etch times would have to be increased to compensate for the thicker epi oxide. This change would also be compatible with the elimination of one masking level which is used to open contacts that contain thicker oxide than the base regions.

A further process improvement involves reactive ion etching with a gas that selectively etches silicon oxide. This gas could be used at all levels where oxide in various contacts is etched. This process change eliminates the silicon nitride overhang and produces a more conformed metal to silicon interface.

This proposal minimizes the lat...