Browse Prior Art Database

H(2) Jet Field Ionization Source

IP.com Disclosure Number: IPCOM000050300D
Original Publication Date: 1982-Oct-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Keller, JH: AUTHOR

Abstract

This article concerns a hydrogen ion source for use in a direct write ion beam lithography system. The source features the introduction of hydrogen gas at the ion emission point in order to increase beam current.

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H(2) Jet Field Ionization Source

This article concerns a hydrogen ion source for use in a direct write ion beam lithography system. The source features the introduction of hydrogen gas at the ion emission point in order to increase beam current.

Direct write ion beam lithography systems require approximately 2x10/-8/ amp beam currents in order to operate effectively. Present field emission hydrogen sources are capable of producing beam currents on the order of 10/-9/ amps. This article describes means for increasing the beam current of such sources to a point where they can be successfully used in an ion beam lithography system.

The proposed ion source includes a conventional field emission structure having, for example, a WEHNELT electrode to which jets have been added to supply a stream of hydrogen gas. As shown in Figs. 1-3, the jets are located in proximity to the anode emission point as part of the WEHNELT electrode and direct hydrogen gas at high mach flow toward the emission point. In this way, gas pressure increase at the emission point is avoided, as well as increased charge exchange and energy spread of the beam. Thus, the beam current may be enhanced. Figs. 1-3 show possible alternative arrangements of the gas feed jets within the field emission ion source system.

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