Browse Prior Art Database

Fabrication of Small Area Josephson Junctions

IP.com Disclosure Number: IPCOM000050415D
Original Publication Date: 1982-Oct-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Blech, IA: AUTHOR [+4]

Abstract

This method relies upon the fact that SiO evaporated onto a surface at an angle has much lower density than when it is evaporated at normal incidence. A lower density SiO layer will etch more rapidly than a higher density SiO layer evaporated at normal incidence.

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Fabrication of Small Area Josephson Junctions

This method relies upon the fact that SiO evaporated onto a surface at an angle has much lower density than when it is evaporated at normal incidence. A lower density SiO layer will etch more rapidly than a higher density SiO layer evaporated at normal incidence.

In Fig. 1, the blanket layer 10 of SiO is evaporated onto an underlying metal layer 12 and pre-existing SiO layer 14.

A five-second etch in HF produced the profile shown in Fig. 2. The lower density SiO on the slopes of layer 12 is removed while the rest of SiO layer 10 is relatively unchanged. Openings 16 could, e.g., be used for fabricating small area Nb Josephson junctions. Material would be deposited into these openings to form, for example, metal counter electrodes.

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