Browse Prior Art Database

Printhead Using Aluminum Conductive Paths in Silicon

IP.com Disclosure Number: IPCOM000050425D
Original Publication Date: 1982-Oct-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Rupprecht, HS: AUTHOR [+3]

Abstract

A thermal print head may be fabricated using thermomigration of aluminum (Al) in silicon (Si) to form a conductive path, as described in J. App. Phys. 47, 2332 (June 1976). Al lines can be formed through 100 mil Si with separations of the order of 100 Microns each with a line resistance of the order of 200 ohms per 3 mils of filament. The outer layer of each printing surface or pel (picture element) may be made up of a ruthenium dioxide (RuO(2)) film over a titanium dioxide (TiO(2)) interlayer in order to impart anticorrosive properties and mechanical wear resistance.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Printhead Using Aluminum Conductive Paths in Silicon

A thermal print head may be fabricated using thermomigration of aluminum (Al) in silicon (Si) to form a conductive path, as described in J. App. Phys. 47, 2332 (June 1976). Al lines can be formed through 100 mil Si with separations of the order of 100 Microns each with a line resistance of the order of 200 ohms per 3 mils of filament. The outer layer of each printing surface or pel (picture element) may be made up of a ruthenium dioxide (RuO(2)) film over a titanium dioxide (TiO(2)) interlayer in order to impart anticorrosive properties and mechanical wear resistance.

1