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Method of Identifying Ion Implantation Damage Not Removable by Annealing

IP.com Disclosure Number: IPCOM000050468D
Original Publication Date: 1982-Nov-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 2 page(s) / 26K

Publishing Venue

IBM

Related People

Hagmann, D: AUTHOR

Abstract

Ion implantation damage not removable by annealing is identified by Rs (sheet resistivity) measurements.

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Method of Identifying Ion Implantation Damage Not Removable by Annealing

Ion implantation damage not removable by annealing is identified by Rs (sheet resistivity) measurements.

Lattice defects produced in a crystalline zone during doping by ion implantation can be cured if the zone was made amorphous by the ions. The transition from the crystalline to the amorphous state occurs at a critical dose and a critical substrate temperature but depends also on other parameters, such as crystal orientation, type and energy of ions and material to be bombarded. During this transition, the Rs values of the zone increase considerably.

The above-described phenomena are dealt with in greater detail, using the substrate temperature as an example. If arsenic is implanted at a dose of 2 x 10/16/ ions . cm/-2/ and an energy of 50 keV, the transition from the crystalline to the amorphous state occurs at a substrate temperature of about 150 degrees C, as shown in the figure. The figure also shows that the Rs values corresponding to the different states change by a factor of 166 in the substrate temperature range of 150 +/- 50 degrees C and that the Rs values > 100 k R/a correspond to the amorphous state. During the production of integrated circuits, damage caused by ion implantation cannot be tolerated, unless it is removable by annealing. A prerequisite for this is the transition to the amorphous state. By means of Rs measurements, the conditions needed to reach that state can be ...