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Method of Eliminating Temperature Resistant Implantation Damage at Silicon Surfaces

IP.com Disclosure Number: IPCOM000050472D
Original Publication Date: 1982-Nov-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Hagmann, D: AUTHOR

Abstract

Temperature-resistant lattice defects caused by ions being implanted into silicon through a screen oxide are eliminated if prior to the conventional high-temperature annealing step, the screen oxide is removed completely and subsequently a thin silicon oxide layer is thermally grown at about 800 degrees C on the silicon surface.

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Method of Eliminating Temperature Resistant Implantation Damage at Silicon Surfaces

Temperature-resistant lattice defects caused by ions being implanted into silicon through a screen oxide are eliminated if prior to the conventional high- temperature annealing step, the screen oxide is removed completely and subsequently a thin silicon oxide layer is thermally grown at about 800 degrees C on the silicon surface.

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