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Method of Determining the Stoichiometry of the Oxygen or Nitrogen Content of Ultrathin SiO(x) or SiN(y) Layers

IP.com Disclosure Number: IPCOM000050481D
Original Publication Date: 1982-Nov-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 2 page(s) / 44K

Publishing Venue

IBM

Related People

Hinkel, H: AUTHOR [+3]

Abstract

By measuring the optical reflectivity of ultrathin SiO(x) or SiN(y) layers, their stoichiometric composition can be rapidly and easily determined.

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Method of Determining the Stoichiometry of the Oxygen or Nitrogen Content of Ultrathin SiO(x) or SiN(y) Layers

By measuring the optical reflectivity of ultrathin SiO(x) or SiN(y) layers, their stoichiometric composition can be rapidly and easily determined.

When, for example, 3 to 10 nm thick SiO(x) layers are ion etched, the reflection signal R is dependent upon the intensity of the oxygen signal measured by Auger Electron Spectroscopy (AES). Therefore, the concentration of oxygen in SiO(x) layers can be derived from the measured value of R. The method uses calibration curves and reflectivity versus oxygen content, and the oxygen concentration is determined by measuring the reflection signal and associating with it a quantitive concentration from the calibration curve.

The figure shows the AES sputter profiles during the O(2)/+/ bombardment of silicon with natural surface oxide, i.e., removal of the surface oxide layer concurrent with oxygen implantation, the intensity curve of AES measured silicon, argon and carbon signals, and the curve of the reflection signal R.

The method can also be used to determine the composition of SiN(y) layers.

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