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Hydrogen Cleaning of Silicon Surface for Forming Reproducible Metal Silicon Contacts

IP.com Disclosure Number: IPCOM000050561D
Original Publication Date: 1982-Nov-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Clabes, J: AUTHOR [+3]

Abstract

This publication relates to a technique for the preparation and maintenance of a clean silicon surface to achieve highly reproducible contacts upon metal deposition.

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This is the abbreviated version, containing approximately 69% of the total text.

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Hydrogen Cleaning of Silicon Surface for Forming Reproducible Metal Silicon Contacts

This publication relates to a technique for the preparation and maintenance of a clean silicon surface to achieve highly reproducible contacts upon metal deposition.

One common problem in preparing metal-silicon (Si) contact devices comes from the native oxide, which is difficult to remove, and its presence often causes poor contact characteristics, e.g., high contact resistance and changes in the barrier height. Although the oxide on chemically clean Si can be further removed in situ (e g., by She usual inert gas sputtering), the modest vacuum quality (10/-5/ to 10/-7/ torr) of typical technical vacuum systems used in device production invariably leads to recontamination from residual gases immediately after the cleaning procedure is stopped, i.e. before the contact is deposited. A method is described herein using hydrogen cleaning to establish and maintain a clean Si surface until a reproducible metal-Si contact is formed.

One embodiment of this method is to use hydrogen ions to sputter-clean the Si surface before the metal deposition. Upon sputtering, the hydrogen ions remove the oxide layer and other surface contaminants. Because of the reactivity between hydrogen and Si, the remaining hydrogen forms Si-H bonds at the surface, Which are known to passivate the surface (make it inert with respect to common residual gases). When the metal is then deposited, the stronger metal-Si...